Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer
2017
Abstract Ultralow equivalent oxide thickness and excellent reliability characteristics in Ge MOS devices with ZrO 2 gate dielectrics are achieved by capping Hf or Zr on interfacial layer. Device with a Hf-cap layer demonstrates the lowest interface trap density and stress-induced leakage current. On the other hand, device with a Zr-cap layer exhibits the lowest hysteresis effects and stress-induced voltage shifts. The HfGeO x IL of high quality and ZrGeO x IL with few oxide traps are promising to improve reliability characteristics in Ge MOS devices.
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