Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si 1−x Ge x

In this paper, we report the effect of two Si precursors, SiH 4 and SiCl 2 H 2 on the micro-loading, morphology and throughput for selective epitaxial growth of Si and Si 1−x Ge x (0 1−x Ge x can be engineered by carefully adjusting the ratio of partial pressures of SiH 4 and SiCl 2 H 2 .