Enhanced Anti-reflective Effect of SiN x /SiO x /InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source

Multi-layer films of SiN x /SiO x /InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of SiN x /SiO x /InSnO was investigated as a function of ratio of SiN x and SiO x thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.