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高温イオン注入によるバルクSi FinFETのCMOS特性の改善【Powered by NICT】
高温イオン注入によるバルクSi FinFETのCMOS特性の改善【Powered by NICT】
2016
Yoshiaki Kikuchi
Toby Hopf
G. Mannaert
Zheng Tao
A. Waite
J. Cournoyer
Jose Ignacio del Agua Borniquel
R. Schreutelkamp
Romain Ritzenthaler
Min-Soo Kim
S. Kubicek
Soon Aik Chew
K. Devriendt
Tom Schram
Steven Demuynck
Naushad Variam
Naoto Horiguchi
D. Mocuta
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