Weak Localization and Weak Anti‐Localization in Polycrystalline In2O3—x Thin Films Grown by Sputtering Method

Weak localization (WL) and weak anti-localization (WAL) phenomena in polycrystalline In 2 O 3-x thin films grown by sputtering have been studied on the magneto-conductance (MC) before and after the heat treatment, as functions of the temperature, the magnetic field, the azimuth of magnetic field and the film thickness (10-60 nm). The WL profile in MC undergoes a drastic change by the heat treatment above 350 °C and the WAL phenomena become remarkable with increasing temperature. It has been concluded that the WAL arises from the spin-orbit scattering by the excess indium atoms through the elimination of oxygen atoms from the indium oxide by the heat treatment.