Old Web
English
Sign In
Acemap
>
Paper
>
High quality ultra-thin (1.5 nm) TiO2-Si3N 4 gate dielectric for deep sub-micron CMOS technology
High quality ultra-thin (1.5 nm) TiO2-Si3N 4 gate dielectric for deep sub-micron CMOS technology
1999
Xin Guo
Xiewen Wang
Zhijiong J. Luo
Terence P. Ma
Takashi Tamagawa
Keywords:
Gate dielectric
Leakage (electronics)
Micrometre
Field-effect transistor
CMOS
Electronic engineering
Optoelectronics
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
4
References
5
Citations
NaN
KQI
[]