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Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices
Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices
2010
Stephen M. Thomas
M. J. Prest
T. E. Whall
C. Beer
D. R. Leadley
E. H. C. Parker
J.R. Watling
R.J.P. Lander
Georgios Vellianitis
Keywords:
High-κ dielectric
Analytical chemistry
Materials science
Optoelectronics
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