Selected Energy Epitaxy of Gallium Nitride

A new apparatus for III-V nitride growth by selected energy epitaxy (SEE) is described. The multi-chamber system comprises a doubly differentially pumped molecular beam source, UHV-compatible growth chamber, x-ray photoelectron spectroscopy (XPS) chamber, UHV transfer line, and loadlock. The growth chamber is equipped for in situ quadrupole mass spectrometry and reflection high-energy electron diffraction (RHEED). Preliminary results of GaN SEE using hyperthermal beams of trimethylgallium (TMG) and ammonia (NH 3 ) are presented.