Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentration with nearly ±1%. We applied MOVPE-grown wafers to fabricate a HEMT 64 kb SRAM with 0.6 µm gates and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.