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Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics
Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics
2000
Nao Miyamoto
A. Saitoh
Tsunenobu Kimoto
Hiroyuki Matsunami
Y. Hishida
Masanori Watanabe
Keywords:
Radiochemistry
p–n diode
Metallurgy
Ion implantation
Ion
Materials science
Optoelectronics
Composite material
Correction
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