Semiconductor vertical copper-interconnected TSV structure filled with organic polymers and forming method

The invention provides a semiconductor vertical copper-interconnected TSV structure filled with organic polymers. The semiconductor vertical copper-interconnected TSV structure comprises a semiconductor base material, wherein a plurality of blind holes or through holes are formed in the semiconductor base material; the internal part of each blind hole or through hole is filled with a copper plating layer; the organic polymers are chemically grafted on the copper plating layers; and micro convex points are arranged on the surface of the base material realizing the filling of copper and the organic polymers. The forming method comprises the following steps: putting the semiconductor base material with the copper plating layers in a chemical plating solution to carry out chemical grafting, wherein polymer layers are grafted on the surfaces of the copper plating layers; after polishing the front side of the semiconductor base material, sputtering a lower metal layer and a copper seed layer; and after coating an optical resist on the surface of the copper seed layer, electroplating the micro convex points, and finally removing the optical resist. Compared with the prior art, the forming method has the beneficial effects that the method provided by the invention is simple and convenient in operation and low in manufacturing process requirement, and the process cost can be reduced well.