Ising model for exchange bias in ferromagnetic/antiferromagnetic bilayers

We propose a Random Anisotropy Ising Model (RAIM) to describe exchange bias in a ferromagnetic(F)/antiferromagnetic(AF) system. The F and AF spins are arranged in a square lattice permitting to control the interface between the two layers. The AF film is quenched and exhibit negative exchange interactions, while interactions in the F film are positives. An anisotropy term is introduced in both layers. The influence of the AF spin arrangement at the interface on exchange bias field is analyzed for compensated, uncompensated or rough interfaces.