Phosphorus doping of polycrystalline CdTe

Phosphorus (P) doping of polycrystalline CdTe films deposited by Elemental Vapor Transport is being investigated. The structure and morphology have been studied using XRD and SEM. XRD studies indicated highly oriented CdTe films along with the presence of hexagonal CdTe. SEM images revealed that the grain size of the films varies in the range of 2–5 μm. Solar cells and junctions are being fabricated in order to measure the doping levels achieved with P, and assess the transport properties and doping efficiency using SIMS for dopant concentration and TRPL for minority carrier lifetimes; these findings will be presented at the conference.