Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

2017 
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and that the short-pulse energy efficiency can be substantially enhanced by spatial non-uniformity in the initial magnetization of the magnetic free layer. The sign of the Oersted field is essential for this enhancement—in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    36
    References
    29
    Citations
    NaN
    KQI
    []