Recent Developments In Large Area Scientific CCD Image Sensors
1989
The design and performance of a 1024x1024 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a 3-phase, three-level polysilicon gate process. The chip is thinned and is employed in the back-illumination mode. Detailed measurements including imagery, read noise, full well capacity, charge transfer efficiency, linearity, dark current, spectral response, residual image, and charge collection efficiency are reported.
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