Controllable exchange bias effect in (Ga,Mn)As/(Ga,Mn)(As,P) bilayers with non-collinear magnetic anisotropy

We have investigated the exchange bias (EB) effect occurring in (Ga, Mn)As/(Ga, Mn)(As, P) bilayers, in which the (Ga, Mn)As layer has an in-plane (IP) magnetic anisotropy, and the magnetic anisotropy of the (Ga, Mn)(As, P) layer is out-of-plane (OP). Planar Hall resistance (PHR) measured during magnetization reversal in this system showed a clear shift of the hysteresis loops, indicating the presence of EB in the (Ga, Mn)As layer. The EB significantly depends on the direction of the field used in the field-cooling process. The observed EB occurring in a bilayer in which the constituent layers have orthogonal magnetic anisotropies can be understood in terms of the formation of magnetic closure domains in the (Ga, Mn)(As, P) layer during field cooling. We show that such EB can be effectively controlled by the process of field cooling, suggesting the possibility of memory device applications based on bilayer systems with orthogonal magnetic anisotropy.