Possible evidence of an internal stress contribution to the shock-crystallization of a-Ge

1973 
Abstract The mechanism of shock-crystallization has been studied using a mica substrate. The shock-crystallization phenomenon is believed to be based on the internal stress stored in the film during sputtering.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    2
    References
    7
    Citations
    NaN
    KQI
    []