Analysis on the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes With Deep-Hole Amorphous Photonic Crystals Structures
2014
We demonstrated that amorphous photonic crystals can effectively improve
the light extraction efficiency of GaN-based light-emitting diodes (LEDs)
by the Anderson localization effect. The finite-difference time-domain method
was employed to analyze the frequency dependence of the light localization
characteristics in the amorphous photonic crystals structure. Numerical studies
revealed that the localization modes become most efficient at certain frequencies,
owing to the confinement by short-range order. With the action of these strong
localization modes, the light that propagated in the horizontal direction
was redirected and propagated in the ${\rm
z}$
-direction. Compared with conventional LEDs, significant
enhancement of the light extraction efficiency (5.83 times) was achievable
from amorphous photonic crystals LEDs with optimized structural parameters.
Finally, we analyzed the physical mechanisms by which amorphous photonic crystals
can effectively improve light extraction.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
47
References
2
Citations
NaN
KQI