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A 40 Gbit/s transimpedance amplifier in 0.25 μm SiGe technology with ultra low power consumption
A 40 Gbit/s transimpedance amplifier in 0.25 μm SiGe technology with ultra low power consumption
2008
Hauptmann
Schoeniger
Eickhoff
Ellinger
Scheytt
Keywords:
Optoelectronics
Semiconductor laser theory
Photodiode
Amplifier
Transimpedance amplifier
Gigabit
ultra low power
Operational amplifier
Low-power electronics
Materials science
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