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The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes | NIST
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes | NIST
2003
Allen R. Hefner
Ty McNutt
David W. Berning
Ranbir Singh
Adwoa Akuffo
Keywords:
Stacking fault
Optoelectronics
NIST
Carrier lifetime
High voltage
Electronic engineering
PIN diode
Degradation (geology)
Materials science
reverse recovery
Correction
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