RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are I max =1279 mA/mm, I DSS =1182 mA/mm, R c =0.43 Omegamiddotmm, rho s =315 Omega/sq, f T =45 GHz, f max(MAG) =64 GHz, and g m =268 mS/mm. Continuous-wave power measurements at 10 GHz produced P sat =3.8 W/mm, G t =8.6 dB, and PAE=30% at V DS =20 V at 25% I DSS . To our knowledge, these are the first power measurements reported at 10 GHz for this material