Shallow trench isolation based on selective formation of oxidized porous silicon
2011
We have studied the porous silicon (PS) formation dependence on the substrate doping concentration as a selective tool to form locally oxidized regions in silicon wafers. This approach could be used for electrical isolation in CMOS circuits as a promising alternative to the shallow trench isolation STI process which begins to show some limitations (voiding and dishing) for the most advanced technologies.
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