Dielectric Characteristics of the ${Ta_2}{O_5}/{Al_2}{O_3}$ Multilayer Thin Films Processed by Reactive Sputtering

Dielectric properties and leakage current characteristics of 100 nm-thick multilayer thin films, which were fabricated by reactive sputtering ofand successively on top of each other for total 9 layers, have been investigated with variation of thecontent.films were amorphous regardless of thecontent. With increasing thecontent from 0% to 100%, refractive index of the films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with thecontent was in good agreement with the behavior that was obtained by assuming parallel capacitors ofand . Leakage current characteristics of multilayer films were superior to those of andfilms. films of 5% and 10%content exhibited excellent leakage current densities which were lower than at 1MV/cm.