Electric and photoelectric properties of semi-insulating crystals of CdTe:Pb

Abstract CdTe:Pb monocrystals were grown by the Bridgemann method. The impurity concentration in the melt was in the ranges of N Pb 0 =10 18 –5×10 19 cm −3 . From the electric measurements it turns out that the lead creates deep levels with E V +0.43 eV in CdTe. At the mentioned concentrations, N Pb 0 the hole concentration is (6.11×10 9 –1.98×10 13 ) cm −3 . From the photoelectric measurements it follows that recombination processes in CdTe:Pb could be explained by the presence of the defects with significantly different trapping cross-sections of electrons and holes ( S pr ≫ S nr ). The trapping asymmetry of the mentioned centers was defined to be S pr / S nr >10 6 .