Effect of interfacial reactions on the photoelectric performance of In/CdTe/ITO and CrOxCdTe/ITO heterostructures

By evaporating undoped CdTe layers onto indium tin oxide (ITO), followed by a layer of In or CrOx, back-effect photovoltaic cells In/CdTe/ITO and CrOx/CdTe/ITO were prepared. It was shown that reducing the area of grain boundaries in CdTe, bringing the space-charge region farther away from the defect-rich region at the CdTe/ITO interface, and employing CrOx instead of In back contacts raise the quantum efficiency of the devices to 6%.