Study on the influence of implant dose rate and amorphization for advanced device characterization

Different dose rates of implant can lead to different amorphous layer thicknesses for amorphizing implants and may influence device performance. In addition, it has to be noticed that the batch type spot-beam was proved as divergent beam with large angle divergence which is different from single wafer spot beam and also takes into consideration by both bare wafer and also real device leanings. In the present study, the interaction between ion beam parameters related to beam scanning architectures (single-wafer spot and ribbon beams) and process results dependent on dose rate and amorphization effect will be evaluated for the effect on thickness of amorphous layer, damage, and electrical properties for advanced device.