Narrow-pulse width high-peak value power pulse type semiconductor laser drive circuit

The invention discloses a narrow-pulse width high-peak value power pulse type semiconductor laser drive circuit which comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2, a diode D1, a diode D2, a transformation transducer T1, a triode transistor N1, a triode transistor N2 and a semiconductor laser LD1, wherein the resistor R3, the resistor R5, the triode transistor N2, the diode D1, the resistor R4 and the transformation transducer T1 in the circuit form a trigger circuit, and the resistor R1, the resistor R2, the resistor R6, the resistor R7, the triode transistor N1, the diode D2, the capacitor C2, the capacitor C1 and the semiconductor laser LD1 form a semiconductor laser pulse drive circuit. The narrow-pulse width high-peak value power pulse type semiconductor laser drive circuit disclosed by the invention can realize a plurality of ns-grade narrow-pulse width high-peak value power laser pulses, and solves the problems of the conventional bipolar type, metal oxidation field effect transistor drive circuits, such as small drive current and low drive speed.