The Auger electron, Rutherford backscattering, secondary neutral mass, and secondary ion mass spectroscopies characterization of a W/TiNy/TiSiz/Si barrier structure for use in 1.0‐μm very large scale integrated circuit contacts

A reliable contact diffusion barrier has been successfully formed by sintering in N2 a physically sputtered W/Ti bilayer. This barrier system is designed for use in 1.0‐μm Al/W/TiNy/TiSz/n+ and p+)Si very large scale integrated complementary metal–oxide semiconductor contacts. The structure of this barrier metallization layer has been physically characterized by Auger electron spectroscopy, Rutherford backscattering spectroscopy, secondary neutral mass spectrometry, and secondary ion mass spectrometry.