Highly doped AlN nanowire pn junction: a step towards a new generation of UV-C LEDs

Using Si for n-type doping and Mg/In co-doping for p-type, AlN nanowire p-n junctions were demonstrated [1]. Optimal electrical activation of acceptor impurities was achieved by electron irradiation. Current voltage characteristics in forward bias conditions have established that the current was varying as Vn, (with n larger than 6) before activation while a space charge limited current regime was observed after activation. The formation of AlN NW p-n junction was assessed by electron beam induced current (EBIC) experiments, putting in evidence the electrical field associated with the junction. [1] A. M. Siladie et al, Nano Lett. 2019, 19, 8357−8364