The mechanism of field-assisted silicon-glass Bonding

Abstract In order to evaluate the field-assisted bonding process, reactions during bonding are studied by measurements of current temperature surge and bonding front displacement. The current characteristics are simulated by Wallis's equivalent circuit. From an emissivity calibrated temperature thermography, it is concluded that Joule heating at the interface is not the most important part of displacement of the bonding front. It is also shown that the displacement of the bonding front is a function of the square root of time. This suggests that the bonding is controlled by diffusion. A bonding mechanism is proposed.