HfO2 films by UV-assisted and thermal injection liquid source MOCVD

Results are presented on physical and electrical properties of HfO 2 films formed on Si (100) by injection liquid source MOCVD, and UV assisted MOCVD. The HfO 2 layers were deposited from a Hf(C 4 H 9 O) 2 [OC(CH 3 ) 2 CH 2 OCH 3 ] 2 precursor, dissolved in an octane solvent at temperatures in the range 350 to 450 °C. From physical analysis using TEM and X-ray reflectrometry, it is demonstrated that the injection MOCVD technique can form continuous 2.5 nm HfO 2 films. The effects of pre-deposition surface treatment and post deposition annealing on the equivalent oxide thickness (T eq ) and oxide conduction are also presented. The role of KrCl* excimer lamp (222 nm) exposure during the deposition process, pre- and post deposition annealing is examined. Deposition rates up to 27 nm/min can be achieved at 450 °C by UV assisted processing.