RF circuits fabricated with CMOS-compatible SiGe HBT process module

We report results of experimental circuits fabricated in a new modular SiGe HBT technology. A variety of available active and passive devices are presented, including ring oscillators, frequency dividers, transimpedance amplifiers and Colpitts oscillators. The spectrum of devices which have been modeled and used includes: SiGe HBTs with f/sub t/ and f/sub max/ of 40 GHz, polysilicon resistors, MIM capacitances, inductors and varicaps. The measurements show first experimental results obtained with a CMOS-compatible SiGe HBT module. ECL gate delays of 23 ps where measured. The VCO's operate at 725 MHz and 2 GHz. The frequency divider operates at 6.2 GHz down to 1.2 V. These circuits are important for wireless and optical fibre communication in the frequency range 1-10 GHz.