Newly Developed High Q FBAR with Mesa-Shaped Membrane

In this paper, the authors present the newly developed high Q film bulk acoustic resonator (FBAR) which has the piezoelectric AlN film sandwiched between two electrode films and mesa-shaped membrane structure by utilizing poly-Si and XeF 2 as a sacrificial layer and dry release gas, respectively. By controlling the etching profile of bottom electrode and sacrificial layer, the poor formation of AlN in the edge region of mesa-shaped membrane could be eliminated. In addition, by reducing the parasitic overlap which both of the electrodes and the piezoelectric layer resides directly on the substrate, the authors improve the characteristics of resonator and filter. When we compare with the typical surface micromachined FBAR, such as resonator having its own Bragg reflector or cavity, we could greatly reduce the needs for tight control of chemical mechanical polishing (CMP) of the layer underneath the resonator. The measured Q value and effective electromechanical coupling coefficient of the resonator with the area of 120times120 mum 2 were 1450 and 6.43%. The peak insertion loss (IL) and bandwidth of filter were 0.60 dB and 70 MHz, respectively