Detailed Performance Loss Analysis of Silicon Solar Cells using High-Throughput Metrology Methods

In this work, novel, high-throughput metrology methods are used to perform a detailed performance loss analysis of $\approx$400 industrial crystalline silicon solar cells, all coming from the same production line. The characterization sequence includes a non-destructive transfer length method (TLM) measurement technique featuring circular TLM structures hidden within the busbar region of the cells. It also includes a very fast external quantum efficiency and reflectance measurement technique. More traditional measurements, like illuminated current-voltage, Suns$V _{OC}$, and photoluminescence imaging are also used to carry out the loss analysis. The variance of the individual loss parameters and their impact on cell performance are investigated and quantified for this large group of industrial solar cells. Some important correlations between the measured loss parameters are found. The nature of these distributions and correlations provide important insights about loss mechanisms in a cell and help prioritize efforts to optimize the performance of the production line.