Improving Material Choices for Advanced Semiconductor Processing

Many plasma facing surfaces are prone to corrosion due to aggressive environment in ion implantation sources. Tungsten materials are commonly used because of their high chemical and temperature stability. To further improve the plasma resistance of tungsten, a method was developed to provide the parts with a coating containing tungsten carbide or tungsten boride. Through depositing carbon and / or boron on the surface via suspension technique and downstream heat treatment, well adhering coatings were formed.