Luminescence spectra of metal-barrier-metal structures

A study was made of the influence of the technology used in the fabrication of a dielectric barrier on the luminescence spectrum of a metal–barrier–metal (MBM) diode. The barrier was formed by electron-beam sputtering or by ion implantation. Various methods of fabrication of the barrier layer affected the electrophysical characteristics, but not the spectral properties of tunnel MBM diodes. This confirmed that the plasma mechanism was the main reason for the luminescence of radiation by MBM diodes.