Magnetoelectric effect based magnetoelectric memory element of ferroelectric/ferromagnetic composite thin film

Disclosed is a magnetoelectric effect based magnetoelectric memory element of a ferroelectric/ferromagnetic composite thin film. Ferroelectric and ferromagnetic thin films are deposited on a Pt/Ti/SiO /Si composite substrate in sequence to prepare a laminated structure; the chemical structural formula of the ferroelectric thin film with a piezoelectric effect is 0.5Ba(Zr Ti ) O -0.5(Ba Ca )TiO (BZT-BCT); the thin film with a magnetostrictive effect is Fe Ga ; the preparation method comprises the steps of preparing the ferroelectric ceramic thin film through radio frequency magnetron sputtering, and preparing the ferromagnetic thin film by direct current magnetron sputtering. The magnetoelectric effect based magnetoelectric memory element has the advantages as follows: the memory element is nonvolatile, capable of keeping the polarized and magnetized states under externally-applied voltage, and low in power consumption; the memory unit has good ferroelectric, piezoelectric and ferromagnetic performances at the room temperature; and the maximum electric field control magnetic resistance effect 6% is obtained when the externally applied bias voltage is 20V.