Direct observation of LPE heterogrowth of GaAs on a GaP substrate

Akira Tanaka,Naoki Izumi,Masakazu Kimura,Tokuzo Sukegawa

Direct observation of LPE heterogrowth of GaAs on a GaP substrate

2000

Akira Tanaka
Naoki Izumi
Masakazu Kimura
Tokuzo Sukegawa

In order to observe the early stage of GaAs growth on a GaP substrate, a liquid-phase epitaxial (LPE) growth system with a long distance microscope was constructed. Successive photographs of growing GaAs islands within 3 min after starting the growth are presented.

Keywords:

Optical microscope
Crystallography
Substrate (chemistry)
Gallium arsenide
Gallium phosphide
Epitaxy
Microscope
Chemistry
semiconductor materials
direct observation

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