700-V 1.0- $hboxmOmega cdot hboxcm^2$ Buried Gate SiC-SIT (SiC-BGSIT)

Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p + gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage V BR and specific on-resistance R onS of the fabricated SiC-BGSIT were 700 V at a gate voltage V G =-12V, and 1.0 mOmegamiddotcm 2 at a current density J D =200A/cm 2 and V G =2.5V, respectively. This R onS is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs