Tuning plasmon frequency by external electric field and its applications

In this paper, the manipulation of the plasmon frequency by means of an external electric field investigated. The application of external electric field with convenient intensity is able to change the density of charge carriers in materials such as metals and semiconductors. This phenomenon can be used to design a tunable multi-range radiations detector. The formula of the density distribution of the electric charge carries as a function of the external electric field, the dimension, the initial density, and the temperature is proposed. The validity of this formula was tested by comparing it with Maxwell distribution function. An application of the formula on the formation of a hot point on the gp120-CD4 connection of HIV-1 and the host cell was considered as a practical example. At the end, the effects of the Johnson thermal noise and the coulomb shot noise are calculated in order to determine precisely the required external electric field.