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Intrinsic and Extrinsic Impurity Incorporation in Very High Purity GaAs Grown From Trimethylgallium and Arsine
Intrinsic and Extrinsic Impurity Incorporation in Very High Purity GaAs Grown From Trimethylgallium and Arsine
1992
M. C. Hanna
Z. H. Lu
E.G. Oh
E. Mao
A. Majerfeld
Keywords:
Zinc
Electron mobility
Arsine
Impurity
Epitaxy
Inorganic chemistry
Gallium arsenide
Trimethylgallium
Materials science
Analytical chemistry
Correction
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