Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs

We demonstrate the asymmetric lattice distortion of pseudomorphic superlattices grown on misoriented substrates. High-resolution x-ray diffractometry has been employed to study InGaAs/GaAs superlattices grown by molecular beam epitaxy on (111)B GaAs with a miscut angle of 1°. We observe the nontrigonal deformation of the InGaAs unit cells, while the GaAs cells retain the cubic symmetry. This result is in accord with the behavior predicted by the anisotropic elasticity theory. Consequently, the threefold symmetry of the [111] axis is lost and, therefore, the interpretation of the diffraction profiles must take account of the actual Miller indices of the substrate surface and reflecting planes used during each measurement. Otherwise, a non-negligible error in the determination of the period thickness and indium fraction could be introduced.