Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy
1995
Metastable Ge1−yCy alloys were grown by molecular beam epitaxy as homogeneous solid solutions having a diamond lattice structure. The substrates were (100) oriented Si wafers and the growth temperature was 600 °C. We report on measurements of the composition, structure, lattice constant, and optical absorption of the alloy layers. In thick relaxed layers, C atomic fractions up to 0.03 were obtained with a corresponding band gap of 0.875 eV. These alloys offer new opportunities for fundamental studies, and for the development of silicon‐based heterostructure devices.
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