Study on pores and defect by synthrotron radiation small angle reflection method and slow positron AnnihilationTechnique

We measured the X-ray small angle refection ( XRR) in Beijing Synchrotron Radiation Facility ( BSRF) and the Doppler broaden of positron in Beijing slow positron beam with Na-22 radiation source for pore SiOx ( 1 less than or equal to x less than or equal to 1.6) film prepared by radio-frequency sputtering at different Ar pressures. The result of XRR showed that with the Ar pressures increasing, densities of films were decreasing and porosity were increasing. Positron annihilation result S parameters were decreasing with Ar increasing, this contributed to the paramagnetic defect E' center reducing Ps production. Comparing with the thickness of films with XRR method and slow positron annihilation analyzing program VEPFIT, it showed that the results were consistency and the result of VEPFIT was samller.