Optical proximity correction: a detail comparison of techniques and their effectiveness

Abstract The study presented here quantifies the benefit of optical proximity correction (OPC) for an I-line and a DUV wafer process in a systematic way. Masks and wafers made with 6 mask writing techniques and 5 OPC software packages each with 6 degrees of aggressiveness were studied. The benefits for 1-D corrections (isolated/dense bias), 1.5-D effects (line end pullback), and 2-D effects (corner rounding) were evaluted. From the accumulated data in the study, we can conclude that OPC features deliver significantly improved line width uniformity and pattern fidelity to etched wafers. The technology is effective and manufacturable with contemporary mask writers and OPC techniques. Data expansion and mask inspection difficulty factors were also investigated.