Hydrogen release during erd analysis of hydrogen in amorphous carbon films prepared by rf-sputtering

Abstract The hydrogen concentration in amorphous carbon films prepared on silicon wafers by the rf-sputtering was measured by the elastic recoil detection technique (ERD) using a 12 MeV 12 C 3+ ion beam. During the measurements, it was observed that the hydrogen concentration decreased to a definite value. The decay rate and the final value of the hydrogen concentration depend on the initial amount of hydrogen and the chemical condition of carbon and hydrogen in the film. The variation in the chemical structure of the films was analysed by comparing IR absorption spectra before and after the ion bombardment. As results, it was found that dangling bonds were created by ion bombardment and that they make CC bonds with neighbors or CO bonds by capturing oxygen atoms in air.