GHz low noise short wavelength infrared (SWIR) photoreceivers

Next generation LIDAR mapping systems require multiple channels of sensitive photoreceivers that operate in the wavelength region of 1.06 to 1.55 microns, with GHz bandwidth and sensitivity less than 300 fW/√Hz. Spectrolab has been developing high sensitivity photoreceivers using InAlAs impact ionization engineering (I 2 E) avalanche photodiodes (APDs) structures for this application. APD structures were grown using metal organic vapor epitaxy (MOVPE) and mesa devices were fabricated using these structures. We have achieved low excess noise at high gain in these APD devices; an impact ionization parameter, k, of about 0.15 has been achieved at gains >20 using InAlAs/InGaAlAs as a multiplier layer. Electrical characterization data of these devices show dark current less than 2 nA at a gain of 20 at room temperature; and capacitance of 0.4 pF for a typical 75 micron diameter APD. Photoreceivers were built by integrating I 2 E APDs with a low noise GHz transimpedance amplifier (TIA). The photoreceivers showed a bandwidth of 1 GHz and a noise equivalent power (NEP) of 150 fW/rt(Hz) at room temperature.