SiGe HBT BiCOMOS technology for millimeter-wave applications

We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f MAX performance reaching 350 GHz that are integrated with advanced CMOS and highfrequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology.