Qualitative model for nanostructures formation in semiconductor material along femtosecond laser beam direction

The experimental results causing the trench of sub-wavelength nanostructures formation in semiconductors 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductors cylindrical rode metallization.