Stress in sputtered TaSi/sub x/ films on polycrystalline silicon
1984
Stress in TaSi/sub x//polycrystalline silicon structures has been examined as a function of film composition, annealing conditions, and deposition parameters. It was found that although stress in as-deposited films is a strong function of these variables, annealed films exhibit a large tensile stress nearly independent of the parameters studied.
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